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Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistorsGo to Link

Vu, Quoc An; Fan, Sidi; Lee, Sang Hyup; Joo, Min-Kyu; Yu, Woo Jong; Lee, Young Hee

ArticleIssue Date2018Citation2D MATERIALS, v.5, no.3PublisherIOP PUBLISHING LTD
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