Tungsten-doped vanadium dioxide thin film synthesis by alternate layer-by-layer growth and post-deposition annealing
DC Field | Value | Language |
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dc.contributor.author | Yang, Haneul | - |
dc.contributor.author | Lee, Seoyun | - |
dc.contributor.author | Ko, Changhyun | - |
dc.date.available | 2021-02-22T05:35:31Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.issn | 1873-4979 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/2483 | - |
dc.description.abstract | Intrinsic vanadium dioxide (VO2) encounters a metal-insulator transition (MIT) sharply at similar to 67 degrees C. Incorporating W6+ into VO2 enables lowering the MIT temperature effectually. Here we have developed a novel two-step synthesis process of high-quality W-doped VO2 thin films along with a delicate doping control: deposition of nanoscale alternately-layered precursor films composed of V and V-W layers by successive sputtering and subsequent annealing. The produced films have been characterized comprehensively to understand the effects of W-doping and process parameters into MIT functionality and structural properties in detail. With W-doping, the change rate of the MIT temperature was determined as similar to -14.5 degrees C/at%W while the resistance change across MIT decreases considerably. This work would be of close relevance to rendering VO2-based devices operable in the wider temperature range. (C) 2019 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER | - |
dc.title | Tungsten-doped vanadium dioxide thin film synthesis by alternate layer-by-layer growth and post-deposition annealing | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.matlet.2019.127081 | - |
dc.identifier.scopusid | 2-s2.0-85076612116 | - |
dc.identifier.wosid | 000506197600043 | - |
dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.262 | - |
dc.citation.title | MATERIALS LETTERS | - |
dc.citation.volume | 262 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordAuthor | Vanadium dioxide thin films | - |
dc.subject.keywordAuthor | Tungsten-doping | - |
dc.subject.keywordAuthor | Metal-insulator transition | - |
dc.subject.keywordAuthor | Sputtering | - |
dc.subject.keywordAuthor | Post-deposition annealing | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/abs/pii/S0167577X19317136?via%3Dihub | - |
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