Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Changhyun | - |
dc.contributor.author | Lee, Yeonbae | - |
dc.contributor.author | Chen, Yabin | - |
dc.contributor.author | Suh, Joonki | - |
dc.contributor.author | Fu, Deyi | - |
dc.contributor.author | Suslu, Aslihan | - |
dc.contributor.author | Lee, Sangwook | - |
dc.contributor.author | Clarkson, James David | - |
dc.contributor.author | Choe, Hwan Sung | - |
dc.contributor.author | Tongay, Sefaatin | - |
dc.contributor.author | Ramesh, Ramamoorthy | - |
dc.contributor.author | Wu, Junqiao | - |
dc.date.available | 2021-02-22T06:26:03Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/3436 | - |
dc.description.abstract | [No Abstract Available] | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory | - |
dc.type | Article | - |
dc.publisher.location | 독일 | - |
dc.identifier.doi | 10.1002/adma.201504779 | - |
dc.identifier.scopusid | 2-s2.0-84976240174 | - |
dc.identifier.wosid | 000374336700009 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.28, no.15, pp 2923 - 2930 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 28 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 2923 | - |
dc.citation.endPage | 2930 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | FEW-LAYER MOS2 | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | NANOSHEET | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordPlus | MODULATION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | ferroelectrics | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201504779 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127
Copyright©Sookmyung Women's University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.