Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Vu, Quoc An | - |
dc.contributor.author | Fan, Sidi | - |
dc.contributor.author | Lee, Sang Hyup | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Yu, Woo Jong | - |
dc.contributor.author | Lee, Young Hee | - |
dc.date.available | 2021-02-22T08:46:12Z | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/4418 | - |
dc.description.abstract | While two-dimensional (2D) van der Waals (vdW) layered materials are promising channel materials for wearable electronics and energy-efficient field-effect transistors (FETs), large hysteresis and large subthreshold swing induced by either dangling bonds at gate oxide dielectrics and/or trap molecules in bubbles at vdW interface are a serious drawback, hampering implementation of the 2D-material based FETs in real electronics. Here, we report a monolayer MoS2 FET with near-zero hysteresis reaching 0.15% of the sweeping range of the gate bias, a record-value observed so far in 2D FETs. This was realized by squeezing the MoS2 channel between top h-BN layer and bottom h-BN gate dielectrics and further removing the trap molecules in bubbles at the vdW interfaces via post-annealing. By segregating the bubbles out to the edge of the channel, we also obtain excellent switching characteristics with a minimum subthreshold swing of 63 mV/dec, an average subthreshold slope of 69 mV/dec for a current range of four orders of magnitude at room temperature, and a high on/off current ratio of 10(8) at a small operating voltage (<1 V). Such a near-zero hysteresis and a near-ideal subthreshold limit originate from the reduced trap density of similar to 5.2 x 10(9) cm(-2) eV(-1), a thousand times smaller than previously reported values. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/2053-1583/aab672 | - |
dc.identifier.scopusid | 2-s2.0-85049743284 | - |
dc.identifier.wosid | 000428773700001 | - |
dc.identifier.bibliographicCitation | 2D MATERIALS, v.5, no.3 | - |
dc.citation.title | 2D MATERIALS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 3 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordAuthor | MoS2 transistor | - |
dc.subject.keywordAuthor | h-BN dielectric | - |
dc.subject.keywordAuthor | heterostructures | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | hysteresis | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/2053-1583/aab672 | - |
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