Validity of Film-Thickness Estimates Based on Angle-Resolved X-ray Photoelectron Spectroscopy Using Various Inelastic Mean-Free-Path Formulae
- Authors
- Lee, Hangil; Kim, Sehun; Lee, Dohyun; Hwang, Chanyong
- Issue Date
- Dec-2007
- Publisher
- 한국물리학회
- Keywords
- XPS; Mean-free-path
- Citation
- Journal of the Korean Physical Society, v.51, no.6, pp 1915 - 1920
- Pages
- 6
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 51
- Number
- 6
- Start Page
- 1915
- End Page
- 1920
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/8057
- DOI
- 10.3938/jkps.51.1915
- ISSN
- 0374-4884
1976-8524
- Abstract
- We investigated the thickness of Ag on a W(001) substrate and the native oxide on top of a $\rm Si_{0.8}Ge_{0.2}$ alloy grown on Si(100) substrate. We used X-ray photoelectron spectroscopy to confirm the consistency of various inelastic mean-free-path formulae. Because the Ag/W(001) system is composed of four core levels (W 4$\it f$, W 4$\it d$, Ag 3$\it d$ and Ag 3$\it p_{\rm 3/2}$) and the $\rm O_2$/$\rm Si_{0.8}Ge_{0.2}$ on Si(100) system is composed of three core levels (Si 2$\it p$, Ge 2$\it p_{\rm 3/2}$ and Ge 3$\it d$), these systems are quite useful for checking the accuracy of various inelastic mean-free-path(IMFP) formulae with a variety of combinations between films and substrates. We found that the reported inelastic mean-free-path formulae were uncorrelated in our systems.
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