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Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

Authors
Kim, Soo JinJang, MiYang, Hee YeonCho, JinhanLim, Ho SunYang, HoichangLim, Jung Ah
Issue Date
Apr-2017
Publisher
AMER CHEMICAL SOC
Keywords
intensely pulsed white light; cross-linking; gate dielectric; organic thin-film transistors; flexible substrate
Citation
ACS APPLIED MATERIALS & INTERFACES, v.9, no.13, pp 11721 - 11731
Pages
11
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
9
Number
13
Start Page
11721
End Page
11731
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/8587
DOI
10.1021/acsami.6b14957
ISSN
1944-8244
1944-8252
Abstract
We report the instantaneous pulsed-light cross linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole free surfaces and exhibit a low leakage current density, organic solvent, resistance; and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly unifirm capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.
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공과대학 (화공생명공학부)
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