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Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB Go to Link

Hwang J.Y., Kim S.S., Rhee J.R., Chun B.S., You I.S., Oh B.S., Kim Y.K., Kim T., Park W.

ArticleIssue Date2005CitationINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, pp.2685 - 2687

Remanence analysis of sub-micron MTJ cell with CoFe/NiFe free layer

Kim T., Hwang I., Park W., Noh J., Hwang J.Y., Kim M.Y., Kim S.S., Rhee J.R.

ArticleIssue Date2004CitationPhysica Status Solidi C: Conferences, v.1, no.12, pp.3538 - 3541

Structural and magnetic properties of amorphous and nanocrystalline CoFeSiB thin films Go to Link

Yoon J., Park S.-Y., Jung M.-H., You C.-Y., Chun B.S., Kim Y.S., Kim Y.K., Kim S.S., Hwang J.Y., Rhee J.R., et al.

ArticleIssue Date2006Citation2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.388 - 389PublisherIEEE

Syntheses of LiMnO2, LiCoO2, LiNiCoO2 by the PVA-Precursor Method and Their Use as a Cathode in the Lithium-Ion Rechargeable Battery

Kweon H.-J., Kim S.S., Kim G.B., 박동곤

ArticleIssue Date1998CitationJournal of Materials Science Letters, v.17, no.20, pp.1697 - 1701PublisherChapman & Hall

The effect of cyclic annealing treatments on magnetoresistance in IrMn-pinned top and bottom spin valves

Rhee J.R., Kim S.S., Hwang J.Y., Kim M.Y., Lee S.S., Hwang D.G., Kim T.W., Yu S.C., Lee H.B.

ArticleIssue Date2004CitationPhysica Status Solidi C: Conferences, v.1, no.12, pp.3546 - 3549

Tunnel barrier roughness dependence of magnetic tunnel junction with synthetic antiferromagnetic pinned layer

Hwang J.Y., Kim S.S., Rhee J.R.

ArticleIssue Date2007CitationSolid State Phenomena, v.121-123, no.PART 2, pp.869 - 872PublisherTrans Tech Publications Ltd

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