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Fabrication and characteristics of magnetic tunnel transistors using amorphous n-type Si films

Lee, SS, Lee, JY, Kim, MS, Choi, JG, Hwang, DG, Rhie, K, Rhee, JR

ArticleIssue Date2004CitationPHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.241, no.7, pp.1498 - 1501PublisherWILEY-V C H VERLAG GMBH

High bias voltage dependence in tunneling magnetoresistance of a ramp-type junction

Lee, SS, Kim, YI, Hwang, DG, Rhie, K, Kim, SW, Rhee, JR

ArticleIssue Date2003CitationJOURNAL OF APPLIED PHYSICS, v.93, no.10, pp.8047 - 8049PublisherAMER INST PHYSICS

Planar Hall effect of glass Fe 70 angstrom/[Co 21 angstrom/Cu 25 angstrom](20) multilayers

Ko, TW, Park, BK, Lee, JH, Rhie, K, Kim, MY, Rhee, JR

ArticleIssue Date1999CitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.198-99, pp.64 - 66PublisherELSEVIER SCIENCE BV

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