Electronic Structure of amorphous InGaO3(ZnO)0.5 Thin Films
- Authors
- Cho, Deok-Yong; Song, Jaewon; Hwang, Cheol Seong; Choi, Woo Seok; Noh, T.W.; Kim, J.-Y.; Lee, H.-G.; Park, B.-G.; Cho, S.-Y.; Oh, S.-J.; Jeong, Jong Han; Jeong, Jae Kyeong; Mo, Yeon-Gon
- Issue Date
- Dec-2009
- Publisher
- Elsevier Sequoia
- Keywords
- InGaZnO; Transparent conducting oxide; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy
- Citation
- Thin Solid Films, v.518, no. 4, pp 1079 - 1081
- Pages
- 3
- Journal Title
- Thin Solid Films
- Volume
- 518
- Number
- 4
- Start Page
- 1079
- End Page
- 1081
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/13628
- DOI
- 10.1016/j.tsf.2009.01.156
- ISSN
- 0040-6090
1879-2731
- Abstract
- The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.
- Files in This Item
-
Go to Link
- Appears in
Collections - 이과대학 > 화학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/13628)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.