Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions
- Authors
- Kim, Yeeun; Kim, Chulmin; Kim, Soo Yeon; Lee, Byung Chul; Seo, Youkyung; Cho, Hyeran; Kim, Gyu-Tae; Joo, Min-Kyu
- Issue Date
- Mar-2022
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- ambipolar transport; black phosphorus; metal-insulator transitions; multilayers; quantum tunneling
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.32, no.13, pp 1 - 8
- Pages
- 8
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 32
- Number
- 13
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/145865
- DOI
- 10.1002/adfm.202110391
- ISSN
- 1616-301X
1616-3028
- Abstract
- Negative differential resistance (NDR) is an exotic quantum tunneling phenomenon that is exhibited in narrow p-n junctions with heavy doping concentrations. However, the presence of multiple heterojunctions in a conventional tunneling device often hampers the observance of NDR and a deep understanding of its origin, particularly in 2D van der Waals heterojunctions. Herein, the emergence of quantum tunneling at the charge neutrality point (V-CNP) in ambipolar multilayered black phosphorus (BP) transistors without heterojunctions is reported. The nearly identical electron and hole carrier densities at V-CNP in the presence of a drain bias (V-D) result in a lateral p-i-n configuration inside the BP multilayers similar to that in a tunneling field-effect transistor. The variation of the local carrier density profile and tunneling barrier with V-D at V-CNP drives a sharp enhancement of the activation energy and local resistance, which consequently allows to observe band-to-band tunneling at up to 340 K. The enhancement of the local doping profile along the BP channel and the NDR behavior in the fabricated reconfigurable top-gate BP device with an h-BN top-dielectric provide further evidence for the origin of NDR in 2D ambipolar materials.
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