Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays
- Authors
- Lee, Hyunkoo; Cho, Hyunsu; Byun, Chun-Won; Kang, Chan-Mo; Han, Jun-Han; Lee, Jeong-Ik; Kim, Hokwon; Lee, Jeong Hwan; Kim, Minseok; Cho, Nam Sung
- Issue Date
- Dec-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE PHOTONICS JOURNAL, v.10, no.6
- Journal Title
- IEEE PHOTONICS JOURNAL
- Volume
- 10
- Number
- 6
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/146906
- DOI
- 10.1109/JPHOT.2018.2877196
- ISSN
- 1943-0655
1943-0647
- Abstract
- We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (AD/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode layers exhibited different hole-injection properties and OLED performances, owing to the different optical and electrical properties of metal anode layers. Based on the OLED characteristics, the Al/TiN layer was selected as an anode layer for OLED microdisplays. A green monochromatic OLED microdisplay panel was designed and implemented using the 0.11-mu m CMOS process. The density of pixels was similar to 2 351 pixels per inch and the panel's active area was 0.7 in in diagonal. The resolution of the panel was 1 280 x 3 x 1 024, corresponding to SXGA. The panel was successfully operated, and the maximal luminance was -460 cd/m(2).
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