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A charge-recycling assist technique for reliable and low power SRAM Design

Authors
Choi, WoongPark, Jongsun
Issue Date
Aug-2016
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Assist; capacitive coupling; charge-recycling; read stability; SRAM; variation; write ability
Citation
IEEE Transactions on Circuits and Systems I: Regular Papers, v.63, no.8, pp 1164 - 1175
Pages
12
Journal Title
IEEE Transactions on Circuits and Systems I: Regular Papers
Volume
63
Number
8
Start Page
1164
End Page
1175
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147044
DOI
10.1109/TCSI.2016.2589118
ISSN
1549-8328
1558-0806
Abstract
This paper presents a novel charge-recycling SRAM assist circuit to reduce the dynamic power consumption of SRAM assist technique. By collaboratively combining the read and write assist schemes, the wasted charge in conventional read assist circuit can be efficiently recycled in write assist technique. In order to compare the dynamic power consumption at ISO minimum operating voltage (MIN) condition, the most probable failure point (MPFP) simulations are performed using 14 nm FinFET technology model. Compared to the conventional assist schemes, thanks to the charge-recycling, 41% power saving, and 2.3% area reduction can be achieved by using the proposed SRAM assist circuit.
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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