ScholarWorks@Sookmyung Women's University: Choi, Woong

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Choi, Woong (최웅)

ICT융합공학부 (전자공학전공)

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SRAM:3||Access disturb margin (ADM):1||Active leakage energy:1||Adaptive sensing:1||Applicationspecific memory:1||Assist:1||Binarized neural network:1||Bitline Computing:1||Boosting:1||Capacitance:1||Computer architecture:1||DCDC power converters:1||Detection coil:1||Discharges (electric):1||Fast transient response:1||Feedback loop:1||InMemory Computing:1||Inmemory computing (IMC):1||Integrated circuits:1||Metal object detection:1||Microprocessors:1||Monte Carlo:1||Ncurve:1||Neuromorphic system:1||Phasevoltage variation:1||Power demand:1||ProcessingInmemory:1||Read Disturb:1||Sensors:1||Short Pulse WL:1||Switches:1||Transfer functions:1||Transient response:1||VMIN:1||Viterbi decoder:1||Voltage control:1||Wireless power transfer system:1||approximate adder:1||bit reconfigurable SARADC:1||capacitive coupling:1||charge domain compute:1||chargerecycling:1||computeinmemory (CIM):1||content addressable memory (CAM):1||convolutional neural network:1||deep neural network:1||domain wall memory:1||dual carry prediction:1||eDRAM:1||embedded memory:1||energy efficiency:1||fast fourier transform (FFT):1||gain cell:1||halfselect problem:1||logiccompatible eDRAM:1||memory:1||nearthreshold voltage:1||onchip learning:1||read stability:1||reference voltage:1||reference voltage generator:1||sensing margin:1||shared bitline:1||singlepath:1||sparse coding:1||spike timing dependent plasticity (STDP):1||spiking neural network:1||subthreshold logics:1||ternary CAM (TCAM).:1||typeIII compensator:1||ultralow voltage:1||variation:1||voltagemode dcdc converter:1||write ability:1||write margin (WRM):1||2T gain cell:1||yield:1||

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Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea 02-710-9127

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