An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells
- Authors
- Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung
- Issue Date
- Jun-2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.8, no.22, pp 11403 - 11412
- Pages
- 10
- Journal Title
- NANOSCALE
- Volume
- 8
- Number
- 22
- Start Page
- 11403
- End Page
- 11412
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147058
- DOI
- 10.1039/c6nr01601d
- ISSN
- 2040-3364
2040-3372
- Abstract
- NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and undoped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (L-D = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.
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