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Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Authors
Na, JShin, MJoo, MKHuh, JKim, YJChoi, HJShim, JHKim, GT
Issue Date
Jun-2014
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.104, no.23, pp.1 - 6
Journal Title
APPLIED PHYSICS LETTERS
Volume
104
Number
23
Start Page
1
End Page
6
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147384
DOI
10.1063/1.4878839
ISSN
0003-6951
Abstract
We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS2) field-effect transistors by confirming that contact resistances (R-contact) measured using the four-probe measurements were similar, within similar to 30%, to source/drain series resistances (R-sd) measured using the two-probe measurements. R-contact values obtained from gated four-probe measurements exhibited gate voltage dependency. In the two-probe measurements, the Y-function method was applied to obtain the Rsd values. By comparing those two R-contact (similar to 9.5 k Omega) and R-sd (similar to 12.3 k Omega) values in strong accumulation regime, we found the rationality that those two values had nearly the same properties, i.e., the Schottky barrier resistances and interlayer resistances. The Rsd values of devices with two-probe source/drain electrodes exhibited thickness dependency due to interlayer resistance changes. The interlayer resistance between two layers was also obtained as similar to 2.0 Omega mm. (C) 2014 AIP Publishing LLC.
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