Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhou, You | - |
dc.contributor.author | Chen, Xiaonan | - |
dc.contributor.author | Ko, Changhyun | - |
dc.contributor.author | Yang, Zheng | - |
dc.contributor.author | Mouli, Chandra | - |
dc.contributor.author | Ramanathan, Shriram | - |
dc.date.accessioned | 2022-04-19T10:11:24Z | - |
dc.date.available | 2022-04-19T10:11:24Z | - |
dc.date.issued | 2013-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147501 | - |
dc.description.abstract | Electrically driven metal-insulator transition (MIT) in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high-speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between the electrically driven ON/OFF current ratio and the thermally induced resistance change during MIT. It is also found that sharp MIT could be triggered by the external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/LED.2012.2229457 | - |
dc.identifier.scopusid | 2-s2.0-84873060208 | - |
dc.identifier.wosid | 000314173200024 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp 220 - 222 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 34 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 220 | - |
dc.citation.endPage | 222 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Correlated electrons | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | metal-insulator transition (MIT) | - |
dc.subject.keywordAuthor | ultrafast switch | - |
dc.subject.keywordAuthor | vanadium dioxide | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6403505 | - |
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