Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
- Authors
- Zhou, You; Chen, Xiaonan; Ko, Changhyun; Yang, Zheng; Mouli, Chandra; Ramanathan, Shriram
- Issue Date
- Feb-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Correlated electrons; memory; metal-insulator transition (MIT); ultrafast switch; vanadium dioxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp 220 - 222
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 2
- Start Page
- 220
- End Page
- 222
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147501
- DOI
- 10.1109/LED.2012.2229457
- ISSN
- 0741-3106
1558-0563
- Abstract
- Electrically driven metal-insulator transition (MIT) in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high-speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between the electrically driven ON/OFF current ratio and the thermally induced resistance change during MIT. It is also found that sharp MIT could be triggered by the external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.
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