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Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
- Authors
- Zhou, Y (Zhou, You); Chen, XN (Chen, Xiaonan); Ko, CH (Ko, Changhyun); Yang, Z (Yang, Zheng); Mouli, C (Mouli, Chandra); Ramanathan, S (Ramanathan, Shr
- Issue Date
- Feb-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Correlated electrons; memory; metal-insulator transition (MIT); ultrafast switch; vanadium dioxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp 220 - 222
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 2
- Start Page
- 220
- End Page
- 222
- ISSN
- 0741-3106
1558-0563
- Abstract
- Electrically driven metal-insulator transition (MIT) in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high-speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between the electrically driven ON/OFF current ratio and the thermally induced resistance change during MIT. It is also found that sharp MIT could be triggered by the external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.
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Related Researcher
- Ko, Chang Hyun
- 첨단소재·전자융합공학부 (신소재물리전공)