Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors
- Authors
- Joo, MK; Huh, J; Mouis, M; Park, SJ; Jeon, DY; Jang, D; Lee, JH; Kim, GT; Ghibaudo, G
- Issue Date
- Feb-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.5
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 5
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147528
- DOI
- 10.1063/1.4788708
- ISSN
- 0003-6951
1077-3118
- Abstract
- Channel access resistance (R-sd) effects on the charge carrier mobility (mu) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without R-sd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (C-gc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided R-sd influence is included. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788708]
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