Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition
- Authors
- Mandal, P (Mandal, Pankaj); Speck, A (Speck, Andrew); Ko, C (Ko, Changhyun); Ramanathan, S (Ramanathan, Shr
- Issue Date
- May-2011
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS LETTERS, v.36, no.10, pp 1927 - 1929
- Pages
- 3
- Journal Title
- OPTICS LETTERS
- Volume
- 36
- Number
- 10
- Start Page
- 1927
- End Page
- 1929
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147769
- DOI
- 10.1364/OL.36.001927
- ISSN
- 0146-9592
1539-4794
- Abstract
- We present results on terahertz (THz) spectroscopy on epitaxial vanadium dioxide (VO(2)) films grown on sapphire across the metal-insulator transition. X-ray diffraction indicates the VO(2) film is highly oriented with the crystallographic relationship: (002)(film)//(0006)(sub) and [010](film)//[2 (1) over bar(1) over bar0](sub). THz studies measuring the change in transmission as a function of temperature demonstrate an 85% reduction in transmission as the thin film completes its phase transition to the conducting phase, which is much greater than the previous observation on polycrystalline films. This indicates the crucial role of microstructure and phase homogeneity in influencing THz properties. (C) 2011 Optical Society of America
- Files in This Item
-
Go to Link
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.