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Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide

Authors
Ko, C (Ko, Changhyun)Ramanathan, S (Ramanathan, Shr
Issue Date
May-2008
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.103, no.10, pp 1 - 4
Pages
4
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
103
Number
10
Start Page
1
End Page
4
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/148215
DOI
10.1063/1.2931006
ISSN
0021-8979
1089-7550
Abstract
Metal-insulator transitions in strongly correlated oxides such as vanadium oxide (VO(2)) are of great scientific and technological interest. Due to the presence of multiple oxidation states, synthesis of high-quality VO(2) films on substrates with the desired phase transition characteristics such as large jumps in phase transition resistance is a challenge. We show that the resistance ratio across the metal-insulator transition as well as the resistance of thin film VO(2) can be modulated at relatively low temperatures by the use of ultraviolet irradiation. The enhanced oxygen incorporation due to creation of excited oxygen species enables controllably tunable stoichiometry. (C) 2008 American Institute of Physics.
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첨단소재·전자융합공학부 (신소재물리전공)
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