Reduction of Gap States of Ternary Ⅲ-Ⅴ Semiconductor Surfaces by Sulfur Passivation: Comparative studies of AlGaAs and InGaP
- Authors
- 이한길; 서재명; 김유권; 정영수; 김세훈
- Issue Date
- May-1996
- Publisher
- AVS
- Citation
- J. Vac. Sci. Technol. A, v.14, no.3, pp 941 - 945
- Pages
- 5
- Journal Title
- J. Vac. Sci. Technol. A
- Volume
- 14
- Number
- 3
- Start Page
- 941
- End Page
- 945
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/150699
- DOI
- 10.1116/1.580419
- ISSN
- 0734-2101
1520-8559
- Abstract
- The effects of sulfur passivation on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron spectroscopy. The surfaces were simultaneously prepared through degreasing and the use of an aqueous (NH4)(2)S-x treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted negligibly with P atoms. The band bending was reduced by 0.7 eV compared to a sputter-cleaned surface. Presumably, sulfur eliminated P-vacancy-related gap states by occupying P sites and forming In-S and Ga-S bonds. By postheat treatment at 180 degrees C, S atoms were not removed from the surface and band bending was reduced further by 0.1 eV. For AlGaAs, S atoms initially reacted with Ga and As, but this treatment could not remove the Al oxide previously formed in the air. Postheat treatment at 180 degrees C simply induced S redistribution from As to Ga and As desorption, which reduced the band bending by 0.3 eV compared to the sputter-cleaned surface-a result similar to that for GaAs. (C) 1996 American Vacuum Society.
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