Prediction of Absolute Hall Effect Sensitivity and Minimum Magnetic Resolution for Two-Dimensional Rhenium Disulfide Multilayer Magnetic Sensors without Magnetic Fields
- Authors
- Joo, Min-Kyu
- Issue Date
- Mar-2023
- Publisher
- 한국진공학회
- Keywords
- Two-dimensional materials; Hall sensor; Magnetic resolution; Analytical model; Contact resistance; Carrier mobility
- Citation
- Applied Science and Convergence Technology, v.32, no.2, pp 41 - 44
- Pages
- 4
- Journal Title
- Applied Science and Convergence Technology
- Volume
- 32
- Number
- 2
- Start Page
- 41
- End Page
- 44
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/151949
- DOI
- 10.5757/ASCT.2023.32.2.41
- ISSN
- 2288-6559
2288-6559
- Abstract
- Absolute Hall-effect sensitivity (SA) and minimum magnetic resolution (Bmin) of two-dimensional (2D) van der Waals Hall elements are predicted without magnetic fields by considering the drain voltage-dependent transconductance and current power spectrum density (PSD). The measured drain-bias-dependent PSD of rhenium disulfide multilayers is suitably described by the carrier number fluctuation noise model, indicating that the effects of carrier trapping/de-trapping into oxide traps dominate the observed current variations. To achieve high currentnormalized Hall sensitivity and SA with a low Bmin at a specific current value, the contact resistance and oxide trap density should be further optimized. Our discussion provides an effective approach for the optimization of 2D multilayer-based Hall elements.
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