Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effectsopen access
- Authors
- Ko, Changhyun
- Issue Date
- Nov-2019
- Publisher
- MDPI
- Keywords
- transition metal dichalcogenides; molybdenum disulfide; two-dimensional materials; ferroelectrics; photoluminescence
- Citation
- NANOMATERIALS, v.9, no.11
- Journal Title
- NANOMATERIALS
- Volume
- 9
- Number
- 11
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/2741
- DOI
- 10.3390/nano9111620
- ISSN
- 2079-4991
2079-4991
- Abstract
- Combining a pair of materials of different structural dimensions and functional properties into a hybrid material system may realize unprecedented multi-functional device applications. Especially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures due to their colossal area-to-volume ratio, excellent flexibility, and high sensitivity to interfacial and surface interactions. Semiconducting molybdenum disulfide (MoS2), one of the well-studied layered materials, has a direct band gap as one molecular layer and hence, is expected to be one of the promising key materials for next-generation optoelectronics. Here, using lateral 2D/3D heterostructures composed of MoS2 monolayers and nanoscale inorganic ferroelectric thin films, reversibly tunable photoluminescence has been demonstrated at the microscale to be over 200% upon ferroelectric polarization reversal by using nanoscale conductive atomic force microscopy tips. Also, significant ferroelectric-assisted modulation in electrical properties has been achieved from field-effect transistor devices based on the 2D/3D heterostructrues. Moreover, it was also shown that the MoS2 monolayer can be an effective electric field barrier in spite of its sub-nanometer thickness. These results would be of close relevance to exploring novel applications in the fields of optoelectronics and sensor technology.
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