Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropyopen access
- Authors
- Ko, Chang Hyun; Chen, Yabin; Chen, Chaoyu; Kealhofer, Robert; Liu, Huili; Yuan, Zhiquan; Jiang, Lili; Suh, Joonki; Park, Joonsuk; Choe, Hwan Sung; Avila, Jose; Zhong, Mianzeng; Wei, Zhongming; Li, Jingbo; Li, Shushen; Gao, Hongjun; Liu, Yunqi; Analytis, James; Xia, Qinglin; Asensio, Maria C.; Wu, Junqiao
- Issue Date
- Jun-2018
- Publisher
- WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM
- Keywords
- 2D; anisotropy; black arsenic; layered semiconductors
- Citation
- Advanced Materials, v.30, no.30
- Journal Title
- Advanced Materials
- Volume
- 30
- Number
- 30
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/4410
- DOI
- 10.1002/adma.201800754
- ISSN
- 0935-9648
1521-4095
- Abstract
- 2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Black phosphorus, for example, is a 2D material that has such in-plane anisotropy. Here, a rare chemical form of arsenic, called black-arsenic (b-As), is reported as a cousin of black phosphorus, as an extremely anisotropic layered semiconductor. Systematic characterization of the structural, electronic, thermal, and electrical properties of b-As single crystals is performed, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). The analysis shows that b-As exhibits higher or comparable electronic, thermal, and electric transport
nisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies can potentially implement novel ideas for scientific research and device applications.
- Files in This Item
-
Go to Link
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/4410)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.