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Results 1-1 of 1 (Search time: 0.004 seconds).
A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge
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Lee, Kyeongho;
Choi, Woong
; Park, Jongsun
Article
Issue Date
2021
Citation
IEEE Journal of Solid-State Circuits, v.56, no.8, pp 2574 - 2584
Publisher
IEEE
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Logic gates
1
memory
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Memory architecture
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Microprocessors
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Power demand
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reference voltage
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Search operations
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sensing margin
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