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Results 1-1 of 1 (Search time: 0.003 seconds).
A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge
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Lee, Kyeongho;
Choi, Woong
; Park, Jongsun
Article
Issue Date
2021
Citation
IEEE Journal of Solid-State Circuits, v.56, no.8, pp 2574 - 2584
Publisher
IEEE
1
Discover
Author
Lee, Kyeongho
1
Choi, Woong
1
Subject
Adaptive sensing
1
Boosting
1
content addressable memory (CAM)
1
Conventional approach
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Discharges (electric)
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Energy efficiency
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Figure of merit (FOM)
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Logic gates
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memory
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Date Issued
2021
1
Language
ENG
1
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IEEE Journal of Solid-State Circuits
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