Effects of low-temperature (120 degrees C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors
- Authors
- Kim, JS (Kim, Jae-Sung); Oh, BS (Oh, Byung Su); Piao, M (Piao, Mingxing); Joo, MK (Joo, Min-Kyu); Jang, HK (Jang, Ho-Kyun); Ahn, SE (Ahn, Seung-Eon); Kim, GT (Kim, Gyu-Tae)
- Issue Date
- Dec-2014
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.116, no.24
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 116
- Number
- 24
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147232
- DOI
- 10.1063/1.4904843
- ISSN
- 0021-8979
1089-7550
- Abstract
- We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 degrees C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing. (C) 2014 AIP Publishing LLC.
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