Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
- Authors
- Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh; Fu, Deyi; Park, Joonsuk; Jung, Hee Joon; Chen, Yabin; Ko, Changhyun; Jang, Chaun; Sun, Yinghui; Sinclair, Robert; Chang, Joonyeon; Tongay, Sefaattin (Tongay, Sefaattin); Wu, Junqiao
- Issue Date
- Dec-2014
- Publisher
- AMER CHEMICAL SOC
- Citation
- NANO LETTERS, v.14, no.12, pp 6976 - 6982
- Pages
- 7
- Journal Title
- NANO LETTERS
- Volume
- 14
- Number
- 12
- Start Page
- 6976
- End Page
- 6982
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147236
- DOI
- 10.1021/nl503251h
- ISSN
- 1530-6984
1530-6992
- Abstract
- Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS2) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS2 by substitutional niobium (Nb) doping, leading to a degenerate hole density of similar to 3 x 10(19) cm(-3). Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally inco
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