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Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Authors
Joo, MKMouis, MJeon, DYKim, GTKim, UJGhibaudo, G
Issue Date
Oct-2013
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.114, no.15
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
114
Number
15
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/147529
DOI
10.1063/1.4825221
ISSN
0021-8979
1089-7550
Abstract
Static and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (R-sd) influence. The gate-to-channel capacitance (C-gc) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C-2D). In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (1D) cylindrical analytical capacitance based model (C-1D) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results. (C) 2013 AIP Publishing LLC.
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첨단소재·전자융합공학부 (신소재물리전공)
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