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Oxide Electronics Utilizing Ultrafast Metal-Insulator TransitionsGo to Link

Yang, Z (Yang, Zheng); Ko, Chang Hyun; Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationANNUAL REVIEW OF MATERIALS RESEARCH, VOL 41, v.41, pp 337 - 367PublisherANNUAL REVIEWS
Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2Go to Link

Oh, DW (Oh, Dong-Wook); Ko, C (Ko, Changhyun); Ramanathan, S (Ramanathan, Shr; Cahill, DG (Cahill, David G.)

ArticleIssue Date2010CitationAPPLIED PHYSICS LETTERS, v.96, no.15PublisherAMER INST PHYSICS
Studies on oxygen chemical surface exchange and electrical conduction in thin film nanostructured titania at high temperatures and varying oxygen pressureGo to Link

Ko, CH (Ko, Changhyun); Karthikeyan, A (Karthikeyan, A; Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationJOURNAL OF CHEMICAL PHYSICS, v.134, no.1PublisherAMER INST PHYSICS
Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 KGo to Link

Yang, Z (Yang, Zheng); Hart, S (Hart, Sean); Ko, C (Ko, Changhyun); Yacoby, A (Yacoby, Amir); Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.110, no.3PublisherAMER INST PHYSICS
Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transitionGo to Link

Mandal, P (Mandal, Pankaj); Speck, A (Speck, Andrew); Ko, C (Ko, Changhyun); Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationOPTICS LETTERS, v.36, no.10, pp 1927 - 1929PublisherOPTICAL SOC AMER
Size effects on stress relaxation across the metal-insulator transition in VO2 thin filmsGo to Link

Balakrishnan, V (Balakrishnan,; Ko, C (Ko, Changhyun); Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationJOURNAL OF MATERIALS RESEARCH, v.26, no.11, pp 1384 - 1387PublisherCAMBRIDGE UNIV PRESS
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layerGo to Link

Ruzmetov, D (Ruzmetov, Dmitry); Gopalakrishnan, G (Gopalakrish; Ko, CH (Ko, Changhyun); Narayanamurti, V (Narayanamurt; Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2010CitationJOURNAL OF APPLIED PHYSICS, v.107, no.11PublisherAMER INST PHYSICS
Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devicesGo to Link

Yang, Z (Yang, Zheng); Ko, CH (Ko, Changhyun); Balakrishnan, V (Balakrishnan,; Gopalakrishnan, G (Gopalakrish; Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2010CitationPHYSICAL REVIEW B, v.82, no.20PublisherAMER PHYSICAL SOC
Thermoelastic switching with controlled actuation in VO2 thin filmsGo to Link

Viswanath, B (Viswanath, B.); Ko, CH (Ko, Changhyun); Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationSCRIPTA MATERIALIA, v.64, no.6, pp 490 - 493PublisherPERGAMON-ELSEVIER SCIENCE LTD
Work Function of Vanadium Dioxide Thin Films Across the Metal-Insulator Transition and the Role of Surface NonstoichiometryGo to Link

Ko, C (Ko, Changhyun); Yang, Z (Yang, Zheng); Ramanathan, S (Ramanathan, Shr

ArticleIssue Date2011CitationACS APPLIED MATERIALS INTERFACES, v.3, no.9, pp 3396 - 3401PublisherAMER CHEMICAL SOC
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