Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory
- Authors
- Ko, Changhyun; Lee, Yeonbae; Chen, Yabin; Suh, Joonki; Fu, Deyi; Suslu, Aslihan; Lee, Sangwook; Clarkson, James David; Choe, Hwan Sung; Tongay, Sefaatin; Ramesh, Ramamoorthy; Wu, Junqiao
- Issue Date
- Feb-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- 2D materials; ferroelectrics; field-effect transistors; nonvolatile memory; transition-metal dichalcogenides
- Citation
- ADVANCED MATERIALS, v.28, no.15, pp 2923 - 2930
- Pages
- 8
- Journal Title
- ADVANCED MATERIALS
- Volume
- 28
- Number
- 15
- Start Page
- 2923
- End Page
- 2930
- ISSN
- 0935-9648
1521-4095
- Abstract
- [No Abstract Available]
- Files in This Item
- Go to Link
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Ko, Chang Hyun
- 첨단소재·전자융합공학부 (신소재물리전공)